In a recent development that’s sent ripples through the tech industry, a former Samsung department head, identified only as Kim, faces charges for allegedly leaking crucial chip technology to a Chinese company. Seoul Central District Prosecutors Office, as reported by Yonhap News Agency, has formally indicted Kim, underlining a significant breach of South Korea’s industrial technology protection law.

The case centers around Kim’s purported actions while at Samsung, involving the theft of proprietary information related to 18-nanometer DRAM semiconductor technology. This technology was allegedly passed to ChangXin Memory Technologies (CXMT), a Chinese semiconductor manufacturer. The gravity of this breach is underscored by prosecutors’ estimation of the damage: a staggering 2.3 trillion won, or approximately $1.8 billion.

Further deepening the intrigue, Kim is accused of not only transferring Samsung’s intellectual property but also enticing multiple technicians with financial incentives to join him at CXMT. The specifics of the allegations include the handover of seven key semiconductor manufacturing technologies to CXMT. His move to the Chinese company in 2016 was purportedly rewarded with tens of millions of dollars.

The impact of this technology transfer is evident. CXMT, relatively unknown in 2016, has since ascended to a prominent position in the DRAM manufacturing sector, gaining recognition in both South Korea and the United States. Adding another layer to the scandal, an employee from a Samsung semiconductor equipment supplier was also indicted for collaborating with Kim in this tech leakage.

While Samsung remains tight-lipped on the issue, CXMT has issued a general statement emphasizing its respect for intellectual property rights and adherence to strict protocols to prevent unauthorized information dissemination. This case highlights the ongoing tensions and competitive dynamics in the global semiconductor industry, where technological secrets are fiercely guarded and highly valued.

VIAsammobile.com
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